A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor

Describes an open diffusion technique with a thin vacuum-deposited Zn3P2 layer covered by an Al2O3 layer, Zn diffusion in (100) n-InP single crystals by this techniques was studied and degradation-free surfaces were obtained. The diffusion profiles were measured. With high-temperature diffusion, p+-p--n junctions were obtained; at lower temperature, abrupt p+-n junctions were found. A planar diffused InGaAsP/InP lateral p-n-p transistor was produced using this technique.