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  4. New Defect Luminescence Scanner for Inline Control of Material Quality
 
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2014
Poster
Title

New Defect Luminescence Scanner for Inline Control of Material Quality

Title Supplement
Poster presented at European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 21-25 September 2014
Abstract
For inline control of the material quality, a non-destructive, non-contact, non-preparational as well as fast and reliable characterization method is needed. Photoluminescence (PL) imaging at room-temperature fulfills all these basic requirements and extended defects can be identified based on their spectral and geometrical fingerprints. Therefore, a new defect luminescence scanner (DLS) has been developed operating at conditions, which allow for rapid full-wafer scanning up to 150 mm wafers (measurement time approx. 20 min). The identification of defects imaged by the DLS will be presented in the paper. Furthermore, a possible inline use of the DLS will be discussed.
Author(s)
Kallinger, Birgit  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Kaminzky, Daniel
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Berwian, Patrick  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Oppel, Steffen
Intego Vision Systeme GmbH
Schütz, Michael
Intego Vision Systeme GmbH
Schneider, Adrian
Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg
Krieger, Michael
Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg
Weber, Jonas
Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg
Friedrich, Jochen  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Project(s)
SiC-WinS
Funder
Bayerische Forschungsstiftung BFS  
Conference
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014  
File(s)
Download (535.44 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-385589
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • homoepitaxial growth

  • characterization

  • photoluminescence

  • critical defects

  • device processing

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