Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology

This paper presents monolithically-integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared to solutions found in literature. Fast switching rates are demonstrated on a monolithic power circuit with integrated gate driver. A highly-linear temperature sensor is integrated in a GaN-HEMT power device with a breakdown voltage of 600 V and on-state resistance of 53 mOMEGA. An area-efficient HEMT structure with integrated free-wheeling diodes is presented. This structure is applied in a monolithic multilevel chip, as well as in a 600 V-class half-bridge chip. The performance of the half-bridge is demonstrated for a buck converter from 400 V to 200 V and with a switching frequency of 1.2 MHz.