Modeling and characterization of a radiation sensitive p-channel transistor in a floating n-well

A novel radiation sensor which is sensitive to alpha particles and protons is characterized, numerical simulations with the codes ToSCA and analytical models being used. The sensor cell consists of a p-channel transistor in a floating n-well. The influence of particle properties, process steps and design parameters are studied. The results obtained by simulation are compared with measurements and are used for an improvement of the sensor design and of the technology.