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  4. Reliability comparison of pure ZrO2 and Al- doped ZrO2 MIM capacitors
 
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2013
Conference Paper
Title

Reliability comparison of pure ZrO2 and Al- doped ZrO2 MIM capacitors

Abstract
The integration of passive devices on chip plays an important role in system miniaturization and enabling of future applications. In order to keep pace with the device scaling and reduction of chip area integrated MIM capacitors of enhanced capacitance density are required for supply buffering, decoupling or signal filtering.
Author(s)
Seidel, K.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Weinreich, Wenke  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Polakowski, P.
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Triyoso, D.H.
Globalfoundries <Malta, USA>
Nolan, M.G.
Globalfoundries <Dresden, Germany>
Yiang, K.Y.
Globalfoundries <Sunnyvale, USA>
Chu, S.
Globalfoundries <Malta, USA>
Mainwork
IEEE International Integrated Reliability Workshop, IIRW 2013  
Conference
International Integrated Reliability Workshop (IIRW) 2013  
DOI
10.1109/IIRW.2013.6804190
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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