High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band

Several millimeter-wave MMICs were fabricated successfully using 0.16 mym pseudomorphic MODFET technology. A 5-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrow band 3-stage low noise amplifier delivers more than 21 dB gain between 70 and 80 GHz. For the first time Cascode transistors in CPW-technology were used for a distributed amplifier achieving a gain bandwidth product of 744 GHz star dB.