Time-of-flight measurements of charge carrier diffusion in In(x)Ga(1-x)N/GaN quantum wells

Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN quantum wells. A mere optical setup with high spatial resolution was established on the basis of confocal microphotoluminescence microscopy in order to measure charge carrier movement directly. We investigate a multiquantum well sample emitting light at about 510 nm and found an ambipolar lateral diffusion constant of 0.25 ± 0.05 cm(2)/s.