Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration

The critical issues for the optimization of the MBE grown layer sequence for the integration of an optical waveguide, a PIN photodiode and a junction field effect transistor (JFET) to form a monolithical integrated receiver chip are discussed. For the JFET layer sequence low residual carrier density of the thick buffer layer has been successfully achieved. The growth of a p+/p++ gate contact layer with minimized acceptor diffusion behaviour is described. For the hybridly grown MOVPE(LPE) GaInAsP/MBE GaInAs PIN/waveguide structure optimum crystallinity is achieved; however, donor accumulation at the interface is detected. MBE grown AlGaInAs as an alternative for the waveguide layer has been investigated. Due to its high resistivity at growth temperatures below 500 degrees C device isolation can be achieved.