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  4. Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE
 
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2017
Poster
Title

Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE

Title Supplement
Poster presented at European Conference on RADiation Effects on Components and Systems, RADECS 2017, Geneva, Switzerland, 02 - 06 October 2017
Abstract
We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).
Author(s)
Steffens, Michael  
Fraunhofer-Institut für Naturwissenschaftlich-Technische Trendanalysen INT  
Höffgen, Stefan  
Fraunhofer-Institut für Naturwissenschaftlich-Technische Trendanalysen INT  
Poizat, Marc
ESA-ESTEC, Nordwijk, Netherlands
Conference
European Conference on RADiation and its Effects on Components and Systems (RADECS) 2017  
File(s)
Download (573.89 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-399318
Language
English
Fraunhofer-Institut für Naturwissenschaftlich-Technische Trendanalysen INT  
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