1989
Conference Paper
Title

Avoidance of substrate damage upon laser recrystallization of an SOI layer

Abstract
Substrate damage (SD) induced by laser recrystallization of a poly-Si layer insulated from a (100) Si substrate by a SiO2 layer is discussed. The different kinds of SD are briefly reviewed. Measures to prevent SD are presented and discussed. Their effectiveness is proven by the fact that after argon laser recrystallization of an SOI layer, substrate NMOS devices showed no change in their characteristics.
Author(s)
Buchner, R.
Haberger, K.
Wel, W. van der
Seegebrecht, P.
Mainwork
Conference
Language
English
Keyword(s)