2003
Journal Article
Title

High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET

Author(s)
Aniel, F.
Enciso-Aguilar, M.
Giguerre, L.
Crozat, P.
Adde, R.
Mack, T.
Seiler, U.
Hackbarth, T.
Herzog, H.J.
König, U.
Raynor, B.
Journal
DOI
Language
English