2012
Conference Paper
Title

Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation

Abstract
We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material's relaxation time constants by differential transmission experiments.
Author(s)
Dietz, R.J.B.
Wilk, R.
Globisch, B.
Roehle, H.
Stanze, D.
Ullrich, S.
Schumann, S.
Born, N.
Voss, N.
Stecher, M.
Koch, M.
Sartorius, B.
Schell, M.
Mainwork
Conference
DOI
Language
English