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  4. Test Circuits for Fast and Reliable Assessment of CDM Robustness of I/O stages
 
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2003
Conference Paper
Title

Test Circuits for Fast and Reliable Assessment of CDM Robustness of I/O stages

Abstract
CDM hardening during the development of technology, devices, libraries and finally products differs significantly from the process well-established for HBM. This paper introduces a method on the basis of specialized CDM test structures including protection elements and sensitive monitor elements. These test structures mimic typical CDM-sensitive circuits found by physical failure analysis over the years. Manufactured in five different technologies, structures were assembled in both a regular package and a new package emulator. CDM stress tests, vf-TLP tests, backside laser interferometry, device simulation, and failure analysis lead to new insights in the complex interdependencies during CDM and underline the need of CDM-specific test structures.
Author(s)
Stadler, W.
Esmark, K.
Reynders, K.
Zubeidat, M.
Graf, M.
Wilkening, W.
Willemen, J.
Qu, N.
Mettler, S.
Etherton, M.
Nuernbergk, D.
Wolf, H.
Gieser, H.
Soppa, W.
Heyn, M. de
Natarajan, M.I.
Groeseneken, G.
Morena, E.
Stella, R.
Andreini, A.
Litzenberger, M.
Pogany, D.
Gornik, E.
Foss, C.
Konrad, A.
Frank, M.
Mainwork
25th Electrical Overstress/Electrostatic Discharge Symposium 2003. Proceedings  
Conference
Annual International Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 2003  
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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