Optimization of InGaAs/InAlAs APDs for SWIR detection with demand for high gain and low breakdown voltage

We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD) for short-wave infrared applications with demand for high gain and low breakdown voltage. The APDs were grown by molecular beam epitaxy. Dark and photo current measurements of fully processed APDs reveal high dynamic range of 10(4) and gain larger than 40 for 25 V reverse bias voltage and cooled operation at 140 K. A maximum gain larger than 300 is demonstrated for room temperature as well as 140 K. Two different approaches to determine the gain of the APD structures are discussed.