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  4. Highly efficient p-i-n-type organic light emitting diodes on ZnO:Al substrates
 
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2007
Journal Article
Title

Highly efficient p-i-n-type organic light emitting diodes on ZnO:Al substrates

Abstract
Aluminum doped zinc oxide (ZAO) is presented in this letter as an alternative transparent electrode: optimized ZAO films offer excellent parameters for organic light emitting diodes (OLEDs). The ZAO films are applied to various p-i-n-type OLEDs. By using green phosphorescent molecules in a double emitter structure, very high efficiencies were obtained, namely, 54.6 cd/A and 61.5 lm/W for 100 cd/m(2) at 2.78 V. Additionally, white OLEDs on ZAO demonstrated pure white emission independent of the luminance and high efficiencies of 12.6 cd/A and 14.5 lm/W for 100 cd/m(2) at 2.6 V, which is comparable to indium-tin-oxide based white OLEDs.
Author(s)
Tomita, Y.
May, C.
Törker, Michael
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Amelung, J.
Eritt, Michael
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Loeffler, F.
Luber, C.
Leo, K.
Walzer, K.
Fehse, Karsten
Huang, Q.
Journal
Applied Physics Letters  
DOI
10.1063/1.2768865
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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