Investigating the ESD robustness of RF circuits and elements by transmission line pulsing

This work describes the application of a combined RF-TLP test set-up. It alternates between pulsed high current characterization and scattering parameter measurements up to 10 GHz in order to investigate the influence of the stress pulses on the RF behaviour of the DUT. As an example, the high current behaviour of a broad band amplifier circuit is analyzed. Furthermore the breakdown behaviour of GaAs MIM capacitors is investigated.