Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

The influence of the electric field on the reliability of AlGaN/GaN HEMTs is investigated in this work. We calculate the electric field strength in one of the most sensitive regions of the device and also apply a drain-voltage step-stress method to our device and change the field amplitude in the gate-drain-region. This procedure enables us to assign technological parameters mitigating the peak field strength and improve reliability.