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  4. Growth of large scale silicon crystals by the rf-heated float zone technique
 
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2017
Conference Paper
Titel

Growth of large scale silicon crystals by the rf-heated float zone technique

Abstract
Improvements of the radio-frequency (rf) heating for Float Zone growth of silicon single crystals are presented. Details with respect to the shape and design of the rf-inductor are described. The specific growth parameters for 4" and 6" ingots are given and the required power consumption is discussed. The formation of spikes during the melting of the feed rod is set in relation to the frequency and temperature dependence of the skin-depth. The doping via the gas phase is explained and results for the absorption efficiency are presented.
Author(s)
Zobel, F.
Mosel, F.
Störensen, J.
Dold, P.
Hauptwerk
XVIII International UIE-Congress - Electrotechnologies for Material Processing 2017
Konferenz
International Congress "Electrotechnologies for Material Processing" 2017
DOI
10.24406/publica-fhg-399785
File(s)
N-484418.pdf (417.55 KB)
Language
English
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