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  4. Growth of large scale silicon crystals by the rf-heated float zone technique
 
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2017
Conference Paper
Title

Growth of large scale silicon crystals by the rf-heated float zone technique

Abstract
Improvements of the radio-frequency (rf) heating for Float Zone growth of silicon single crystals are presented. Details with respect to the shape and design of the rf-inductor are described. The specific growth parameters for 4" and 6" ingots are given and the required power consumption is discussed. The formation of spikes during the melting of the feed rod is set in relation to the frequency and temperature dependence of the skin-depth. The doping via the gas phase is explained and results for the absorption efficiency are presented.
Author(s)
Zobel, Frank  
Mosel, F.
Störensen, J.
Dold, Peter
Mainwork
XVIII International UIE-Congress - Electrotechnologies for Material Processing 2017  
Conference
International Congress "Electrotechnologies for Material Processing" 2017  
File(s)
Download (417.55 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-399785
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaische Module

  • Systeme und Zuverlässigkeit

  • Photovoltaik

  • Silicium-Photovoltaik

  • Feedstock

  • Kristallisation und Wafering

  • cristallisation

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