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  4. Temperature-induced spin reversal in n-GaAs.
 
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1992
Journal Article
Title

Temperature-induced spin reversal in n-GaAs.

Other Title
Temperaturinduzierte Spinumkehr in n-GaAs
Abstract
Free and bound electrons in bulk GaAs are investigated by cyclotron resonance in the freeze out regime at temperatures below 40 K. A temperature-induced reversal of the relative intensities of the spin split free electron transition 0 to 1 is observed, providing strong evidence for a spin reversal at a temperature of about 25 K. In contrast, no spin reversal is found for the single electron transition 1s to 2psubplus1 of the shallow donors.
Author(s)
Batke, E.
Bollweg, K.
Merkt, U.
Ganser, P.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Solid State Communications  
DOI
10.1016/0038-1098(92)90087-P
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Bulk-Eigenschaft

  • bulk property

  • GaAs

  • III-V Halbleiter

  • III-V semiconductors

  • Magnetfeldeinfluß

  • magnetic field influence

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