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  4. Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power
 
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2017
Conference Paper
Title

Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power

Abstract
This paper reports the enhancement of the 100 nm GaN high-electron-mobility transistor and circuit technology by two evolutionary process development steps. Both, the application of a new gate-metallization and an optimized nitride deposition increases the high-frequency performance of the GaN-based technology significantly, up to measured ft = 100 GHz and fmax = 300 GHz values, respectively. The enhancement of the considered process development is also verified on circuit level by the realization of a power amplifier. The circuit, targeting the E-band satellite communication frequencies (71-76 GHz & 81- 86 GHz), demonstrates a high gain at a maximum of 27 dB, along with a high saturated output power of more than 1 W within the entire frequency range of interest.
Author(s)
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, Sandrine  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Dammann, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE Asia Pacific Microwave Conference, APMC 2017  
Conference
Asia Pacific Microwave Conference (APMC) 2017  
DOI
10.1109/APMC.2017.8251463
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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