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  4. A radiation hard RISC-V microprocessor for high-energy physics applications
 
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August 19, 2023
Journal Article
Title

A radiation hard RISC-V microprocessor for high-energy physics applications

Abstract
Recently, applications in high energy physics are considering the use of RISC-V microprocessors in harsh radiation environments. In this paper, we present the STRV-R1, a first RISC-V processor design adapted to ensure sufficient tolerance to radiation-induced soft errors in a near-beamline LHC environment and to enable the development of microprocessor-based systems in such environments. We compare the resource overhead imposed by the TMR based protection scheme with an unprotected design. The processor was exposed to 1 Grad TID to verify adequate hardness against long-term cumulative ionizing damage. Pulsed laser and heavy ion irradiations were performed to characterize the response of the design to radiation-induced soft errors. Over the different irradiation configurations, the cross sections for SEFIs were improved by up to 8000× compared to the SEU cross section by introducing TMR-based soft error protection. This reduction in cross section resulted in a 5.12× increase in the cell count of the processor design compared to the unprotected design and a 4.96× increase in the required power budget. During irradiation, it was observed that in systems with complex combinatorial logic, such as a RISC-V microprocessor core, the SEEs are predominantly caused by SETs.
Author(s)
Walsemann, Alexander
Fachhochschule Dortmund
Karagounis, Michael
Fachhochschule Dortmund
Stanitzki, Alexander  
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Tutsch, Dietmar
Universität Wuppertal
Journal
Nuclear instruments and methods in physics research, Section A. Accelerators, spectrometers, detectors and associated equipment  
Project(s)
RADiation facility Network for the EXploration of effects for indusTry and research  
R&D DETEKTOREN (Neue Trackingtechnologien): Effiziente Versorgung von CMOS Sensoren mit hohem Grad an Wiederverwendbarkeit  
Funder
European Commission  
Bundesministerium für Bildung und Forschung -BMBF-  
DOI
10.1016/j.nima.2023.168633
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • fault tolerance

  • radiation testing

  • redundancy

  • RISC-V

  • single event effects

  • triple modular redundancy

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