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  4. Using CC-TLP to get a CDM robustness value
 
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2015
Conference Paper
Title

Using CC-TLP to get a CDM robustness value

Abstract
Charged Device Model (CDM) like stress represents the highest ESD risk during handling of single devices. Today air discharge compromises repeatability of CDM tests of products in a package. The paper demonstrates that the repeatable Capacitive Coupled TLP (CC-TLP) reproduces CDM failure signatures at both package and wafer level. Data will be shown to compare the stress failing level and the failure locations on the chip.
Author(s)
Esmark, K.
Gaertner, R.
Seidl, S.
Nieden, F. zur
Wolf, H.
Gieser, H.
Mainwork
37th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2015. Proceedings  
Conference
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 2015  
DOI
10.1109/EOSESD.2015.7314799
Language
English
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
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