LED-retrofit based on AlGaN/GaN-on-Si field-effect transistor drivers

This work demonstrates the suitability of AlGaN/GaN-on-Si field effect transistors (FETs) for their use in LED drivers. The transistors are tested in an isolated buck converter and an efficiency of 86% is measured for the full converter circuit. The driver circuit is combined with an LED module based on a laser-structured Aluminium Nitride (AIN) ceramic board onto which 21 high power white-emitting LED chips are mounted. From this combination an LED-Retrofit lamp with a total light output of 2676 lm at an efficacy level of 119lm/W. The results compare favorably to the state-of-the-art commercial solutions.