Terahertz emission from a large-area GaInAsN emitter

A large-area interdigitated terahertz emitter based on molecular-beam epitaxy grown GaInAsN with an additional AlGaAs heterostructure is investigated as a terahertz source for excitation wavelengths between 1.1 and 1.5 mu m. The optical and electrical properties of the emitter material exhibit absorption up to a wavelength of 1.5 mu m and have a resistivity of 550 k Omega cm. Terahertz waves were detected by electro-optical sampling with a bandwidth exceeding 2 THz. Best performance is found for excitation wavelengths below 1.35 mu m. Furthermore the emission properties for several excitation powers are investigated, showing a linear increase in terahertz emission.