High efficient PV-inverters with silicon carbide transistors

The application of silicon carbide (SiC) transistors in PV-inverters is shown and rated respective to their performance. Currently, there are several field effect or bipolar transistor types in development with normally-on and normally-off characteristics. It is not yet clear, which transistor type will prevail in the market and which will remain a niche product. The difference in performance and switching behaviour to standard Silicon transistors is pointed out, to demonstrate the optimum application for each transistor type.