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  4. Erratum: 3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond
 
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2020
Erratum
Title

Erratum: 3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond

Author(s)
Gerrer, T.
Czap, Heiko  orcid-logo
Maier, T.
Benkhelifa, Fouad  
Müller, Stefan
Nebel, C.E.
Waltereit, Patrick  
Quay, Rüdiger  orcid-logo
Cimalla, Volker  
Journal
AIP Advances  
Open Access
DOI
10.1063/1.5143448
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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