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  4. Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28-38-GHz GaN Power Amplifier MMIC
 
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2021
Journal Article
Title

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28-38-GHz GaN Power Amplifier MMIC

Abstract
In this article, we summarize the theoretical matching boundaries and show the limitations they implicate for real-world amplifier design. Starting with a common schematic prototype, we investigate the question of how to realize its electrical response in a densely routed, massively parallelized layout. To that end, we develop a comprehensive study on the application of space-mapping techniques toward the design of high-power amplifiers (HPAs). We derive three reference design procedures and compare their performance in terms of convergence, speed, and practicality when laying out a densely routed HPA interstage matching network. Subsequently, we demonstrate the usefulness of the study by designing the networks of a compact three-stage eight-way wideband HPA in the Ka-band. The processed monolithic microwave integrated circuit features a 1-dB large-signal bandwidth of more than 11 GHz (a fractional bandwidth of 32.8%) and thus covers most of the Ka-band with an output power exceeding 6 W in 3 dB of gain compression. This demonstrates the highest combination of power and bandwidth to date using a reactively matched topology in the Ka-band.
Author(s)
Neininger, Philipp  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
John, Laurenz  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Thome, Fabian  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Friesicke, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brückner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Zwick, Thomas
KIT, Karlsruhe
Journal
IEEE transactions on microwave theory and techniques  
Open Access
DOI
10.1109/TMTT.2021.3065108
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride (GaN)

  • high-electron-mobility transistor (HEMT)

  • Ka-Band

  • milimeter-wave (mmW)

  • monolithic microwave integrated circuit (MMIC)

  • power amplifier (PA)

  • space mapping

  • wideband matching

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