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  4. CNTFET Technology for RF Applications: Review and Future Perspective
 
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2021
Journal Article
Title

CNTFET Technology for RF Applications: Review and Future Perspective

Abstract
RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for improvements. This review compiles and compares the different CNT integration technologies, the achieved RF results as well as demonstrated RF circuits. Moreover, it suggests approaches to enhance the RF performance of CNTFETs further to allow more profound CNTFET based systems e.g., on flexible substrates, highly dense 3D stacks, heterogeneously combined with incumbent technologies or an all-CNT system on a chip.
Author(s)
Hartmann, Martin
Technische Universität Chemnitz
Hermann, Sascha  
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Marsh, Phil F.
Carbonics Inc.
Rutherglen, Christopher
Carbonics Inc.
Wang, Dawei
Carbon Technology Inc.
Ding, Li
Key Laboratory for the Physics and Chemistry of Nanodevices
Peng, Lianmao
Key Laboratory for the Physics and Chemistry of Nanodevices
Claus, Martin
Technische Universität Dresden
Schröter, Michael
Technische Universität Dresden
Journal
IEEE Journal of Microwaves
Open Access
DOI
10.1109/JMW.2020.3033781
Additional link
Full text
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Keyword(s)
  • Carbon nanotubes

  • CNTFET

  • compact modelling

  • cut-off frequency

  • linearity

  • maximum oscillation frequencies

  • radio frequency

  • RF circuits

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