W-band high gain passivated 0.15 mu m InP-based HEMTs MMIC technology with high thermal stability on InP substrates

InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor, including the highest f(t) and f(max), the lowest noise figure and the highest efficiencies for power amplification . These characteristics make this technology the best choice for advanced systems for space and military applications such as smart munitions, passive imaging and radiometry, and commercial applications such as automotive radar. Unfortunately, the relative immaturity of InP-based HEMT processing technology, in comparison to that of GaAs based PHEMTs, limits its introduction into systems. Consequently, much effort is being directed towards the development of reliability and manufacturability of the InP-based HEMT MMICs. In this paper, we will demonstrate the fabrication and the design of W-band high gain passivated 0.15 mu m double side doped InAlAs/InGaAs HEMTs with low feed-back capacitance, and high uniformity and yield over 2'' InP substrates. An explanation of the phys ical origin of the gate-drain feed-back capacitance will be given. Furthermore, the robustness of our InP-based HEMT technology will be demonstrated by high temperature stress.