• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Scopus
  4. Photoconductive THz Sources Driven at 1550 nm
 
  • Details
  • Full
Options
2021
Book Article
Title

Photoconductive THz Sources Driven at 1550 nm

Abstract
This chapter emphasizes Terahertz (THz) metrology–one of the most problematic and daunting topics in the THz field, especially the measurement of THz power. Through collaboration with the PTB in Berlin, Germany, it describes perhaps the most accurate THz power sensor in the world today, and demonstrates it an exemplary fashion. Optical-fiber coupling of THz PC devices is highly desirable for many reasons, including compactness of system integration, mechanical and thermal stability, and cost. 1550-nm operation is advantageous compared to 780 nm for reasons pertaining to optical-fiber technology. There are other issues too that are usually under-emphasized in THz device analyses. The three are ohmic contact effects, thermal effects, and circuit power limitations. The chapter addresses many pitfalls in THz power measurements, such as the leakage of 1550-nm drive laser power, and far-infrared thermal re-emission from the substrate on which the device is fabricated.
Author(s)
Brown, Elliott R.
Wright State University
Globisch, Björn
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Carpintero Del Barrio, Guillermo
Universidad Carlos III de Madrid
Rivera, Alejandro
Universidad Carlos III de Madrid
Segovia-Vargas, Daniel
Universidad Carlos III de Madrid
Steiger, Andreas
Physikalisch-Technische Bundesanstalt
Journal
Fundamentals of Terahertz Devices and Applications
Open Access
DOI
10.1002/9781119460749.ch3
Additional link
Full text
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024