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  4. Unconventional conductivity increase in multilayer black phosphorus
 
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2023
Journal Article
Title

Unconventional conductivity increase in multilayer black phosphorus

Abstract
Multilayers of so-called 2D van der Waals materials have gained considerable attention as active components of next-generation electronic and optoelectronic technologies, with semiconducting black phosphorus (BP) regarded as one of the most promising systems. The applicability and performance limits of BP in both stand-alone and heterostructure-based multilayer devices are determined by individual flake charge transport properties, which synergistically depend on the number of layers and the strength of interlayer coupling between those. In this work, we study the DC electrical transport characteristics of high-quality BP field-effect devices within a wide range of flake thicknesses at room temperature. The experimental data show a non-trivial increase in conductivity and hole density with a reduced number of layers while maintaining constant field-effect mobility due to the prevalence of electron-phonon scattering. Based on the solution of the 1D Schrödinger-Poisson equation, we find that the observed phenomena are a direct consequence of non-negligible interlayer coupling, which in turn causes a local redistribution of free charge carriers towards the central layers. Our data show that due to the electrostatic conditions at the flake surfaces, a naturally protected 2D hole gas can be encapsulated in flakes as high as 10 nm, which preserves the bulk-like bandgap and effective carrier masses due to the electrostatic environment.
Author(s)
Koleśnik-Gray, Maria M.
Meingast, Laura
Siebert, Martin
Unbehaun, Tim
Huf, Tobias
Ellrott, Günter
Abellán, G.
Wild, Stefan
Lloret, Vicent
Mundloch, Udo
Schwarz, Julian
Niebauer, Michael
Szabo, Maximilian
Rommel, Mathias  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Hutzler, Andreas
Hauke, Frank
Hirsch, Andreas
Krstić, Vojislav
Journal
npj 2D materials and applications  
Open Access
DOI
10.1038/s41699-023-00384-2
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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