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  4. Electron and hole accumulation in InN/InGaN heterostructures
 
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2011
Journal Article
Title

Electron and hole accumulation in InN/InGaN heterostructures

Abstract
For high frequency field effect transistors, one of the promising approaches is to grow a very thin (<=10 nm) InN channel pseudomorphically with low defect density between low lattice mismatched InGaN layers. The present work provides a comprehensive analysis of such structures by varying width of the InN well. Both experimental and theoretical approaches have been applied in order to optimize the InN potential well structure for a transistor operation.
Author(s)
Lebedev, Vadim  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Polyakov, V.M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Knübel, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Aidam, Rolf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Cimalla, Volker  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Granzner, R.
Schwierz, F.
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physica status solidi. C  
Conference
International Symposium on Compound Semiconductors (ISCS) 2010  
DOI
10.1002/pssc.201000441
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • InN

  • field effect transistor

  • epitaxy

  • simulation

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