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  4. Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
 
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2001
Journal Article
Title

Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy

Author(s)
Giehler, M.
Ramsteiner, M.
Waltereit, Patrick  
Brandt, O.
Ploog, K.H.
Obloh, H.
Journal
Journal of applied physics  
DOI
10.1063/1.1347406
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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