• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Artikel
  4. Waveguide-integrated PIN photodiode on InP
 
  • Details
  • Full
Options
1987
Journal Article
Title

Waveguide-integrated PIN photodiode on InP

Abstract
An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07 dB/ mu m. For detectors with sufficient length (>300 mu m) a responsivity of 0.81 A/W was achieved at 1.3 mu m wavelength.
Author(s)
Bornholdt, C.
Döldissen, W.
Fiedler, F.
Kaiser, R.
Kowalsky, W.
Journal
Electronics Letters  
DOI
10.1049/el:19870002
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • integrated optoelectronics

  • optical waveguides

  • photodiodes

  • vertical integration

  • p-i-n diodes

  • pin photodiode

  • inverted optical rib waveguide

  • 1.3 micron

  • InGaAs-InGaAsp-InP

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024