Deep UV laser induced luminescence in oxide thin films

Time-resolved luminescence experiments have been set up in order to study the interaction of 193-nm laser radiation with dielectric thin films. At room temperature, Al/sub 2/O/sub 3/ coatings show photoluminescence upon ArF excimer laser irradiation, with significant intensity contributions besides the known substrate emission. Time- and energy-resolved measurements indicate the presence of oxygen-defect centers in Al/sub 2/O/sub 3/ coatings, which suggests a strong single- photon interaction at 193 nm by F/sup +/ and F center absorption. Measurements on highly reflective thin-film stacks, consisting of quarter-wave Al/sub 2/O/sub 3/ and SiO/sub 2/ layers, indicate similar UV excitations, mainly from color centers of Al/sub 2/O/sub 3/