A split-step Fourier transform based analysis of the spontaneous emission factor

A simplified classical model of spontaneous emission processes in a typical semiconductor laser has been presented which when combined with the SSFT yields accurate results for the ratio of spontaneous emission K-factors at different values of the antiguiding parameter. It is expected that the analysis could be extended to yield information concerning the longitudinal dependence of the electric field arising from spontaneous emission processes within a laser of realistic length. Possibly, the true power-current line might also be calculable if the spontaneous emission induced noise is incorporated by a classical approximation in a complete SSFT-based semiconductor laser model; however, further simplification of the procedure together with a careful optimization of the grid point spacing would then be necessary in order to conserve computer time.