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  4. Lead chalcogenide implanted diode lasers in CW operation above 77 K
 
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1994
Journal Article
Title

Lead chalcogenide implanted diode lasers in CW operation above 77 K

Other Title
Implantierte Bleichaldogenid Homostrukturlaser mit CW-Betriebstemperatur oberhalb 77 K
Abstract
Ar plus implanted PbSe lasers with operating temperatures above 77 K in CW mode and promising spectral properties have been demonstrated for the first time. A qualitative explanation of their characteristics is given.
Author(s)
Xu, J.
Lambrecht, A.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Tacke, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Electronics Letters  
DOI
10.1049/el:19940414
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • Diodenlaser

  • Halbleiterlaser

  • laser

  • mid IR

  • mittleres IR

  • semiconductor laser

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