Metamorphic 50 nm InAs-Channel HEMT

A 50 nm gate length metamorphic HEMT with InAs-channel and InAlAs-barriers for high frequency low power applications has been developed. Using a composite channel layout with backside doping an on-state breakdown voltage of 1.2 V and a g(ind m) max/g(ind O) ratio of four at V(ind DS) = 1.2 V was achieved. A low g(ind m) dispersion of only 5 % was measured. The realized three-stage 70 GHz LNA shows a power dissipation as low as 1.9 mW with an associated small signal gain of 6 dB.