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  4. Development and characterisation of 3D integration technologies for MEMS based on copper filled TSVs and copper-to-copper metal thermo compression bonding
 
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2013
Conference Paper
Title

Development and characterisation of 3D integration technologies for MEMS based on copper filled TSVs and copper-to-copper metal thermo compression bonding

Abstract
3D integration technologies show increasing importance for high volume applications while realizing the smallest system dimensions at least. Therefore vertical interconnect and wafer bonding technologies were optimized and adapted to reach a high yield using quite narrow contact areas and bond frames. These technologies must enable mechanical stable bonding with high degree of strength, hermeticity, and an electrical connection from all layers of the stack to the next level.
Author(s)
Baum, Mario  
Hofmann, Lutz
Wiemer, Maik  
Schulz, Stefan E.  
Geßner, Thomas  
Mainwork
International Semiconductor Conference Dresden-Grenoble, ISCDG 2013  
Conference
International Semiconductor Conference Dresden-Grenoble (ISCDG) 2013  
DOI
10.1109/ISCDG.2013.6656329
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
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