Porous silicon light-emitting P-N junction

The fabrication and properties of a light-emitting porous silicon device incorporating a p-n junction are presented. By means of a selective anodization of a sandwich of p+ on n-substrate, a nanoporous recombination region within the p-n junction is formed. The device shows rectifying characteristics with a considerable series resistance. When driven under forward bias, the diode emits bright light with linear dependence on the current. The measured external quantum efficiency is of the order of 10high-2 percent. The internal quantum efficiency should be at least one order of magnitude higher.