Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides

The MBE growth of In0.52Ga0.18Al0.30As ( lambda g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda =1.55 mu m but concomitantly high resistivity of >104 Omega cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at lambda =1.55 mu m.