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  4. Accurate Modelling of GaN HEMT Capacitances in the Framework of the ASMHEMT Model
 
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2023
Conference Paper
Title

Accurate Modelling of GaN HEMT Capacitances in the Framework of the ASMHEMT Model

Abstract
Results of pulsed IV, CV and loadpull measurements performed on a GaN HEMT are presented. A model is developed for this device in the framework of the ASM-HEMT model. The developed model utilizes the advantage of measuring beforehand several parameters of the model; hence, reducing the number of parameters to be optimized for a reasonable fit to the measured data. A new approach for modelling the OFF-state capacitances of GaN HEMT is also presented which accounts for the details of the structure of the device, while at the same time maintaining the speed of the model.
Author(s)
Albahrani, Sayed Ali  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Khandelwal, Sourabh
Macquarie University
Mainwork
18th European Microwave Integrated Circuits Conference, EuMIC 2023  
Conference
European Microwave Integrated Circuits Conference 2023  
European Microwave Week 2023  
DOI
10.23919/EuMIC58042.2023.10288780
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • compact model

  • GaN

  • HEMT

  • semiconductor device measurement

  • semiconductor device modeling

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