Electroluminescence efficiency of InGaN light emitting diodes: Dependence on AlGaN:Mg electron blocking layer width and Mg doping profile

The influence of the Mg doping profile on the luminescence performance of InGaN light emitting diodes with an emission wavelength of 395 nm has been investigated. An increased spread of the Mg doping atoms towards the InGaN quantum well active region results in thermal quenching of the photoluminescence and electroluminescence intensity, and thus in a lower output power at 20 mA of the devices at room temperature. Further, the output power-versus current characteristics become increasingly superlinear, indicating that Mg introduces nonradiative recombination centers in the InGaN quantum well active region.