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1988
Conference Paper
Titel
Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
Abstract
Presents technologies and devices suited for monolithic integration of InP based optoelectronics and electronic components needed in optical transmitters. The authors report on BRS-lasers on semi-insulating InP substrates and BH-lasers regrown with semi-insulating InP MOVPE layers as light sources. Single heterojunction bipolar transistors and a differential amplifier IC with constant current source are fabricated and characterized.

Language
English
Tags
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optoelectronics
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monolithic integrated circuits
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optical communication equipment
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transmitters
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monolithic ic
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semiinsulating substrates
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oeics
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optoelectronics
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electronic components
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optical transmitters
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brs-lasers
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movpe layers
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light sources
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heterojunction bipolar transistors
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differential amplifier ic
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constant current source
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InGaAsP-InP
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InP substrates