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  4. Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
 
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1988
Conference Paper
Titel

Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs

Abstract
Presents technologies and devices suited for monolithic integration of InP based optoelectronics and electronic components needed in optical transmitters. The authors report on BRS-lasers on semi-insulating InP substrates and BH-lasers regrown with semi-insulating InP MOVPE layers as light sources. Single heterojunction bipolar transistors and a differential amplifier IC with constant current source are fabricated and characterized.
Author(s)
Bach, H.G.
Fiedler, F.
Grote, N.
Bouadma, N.B.
Rose, B.
Devoldere, P.
Tegude, F.J.
Speier, P.
Wunstel, K.
Hauptwerk
Sixth European Fibre Optic Communications and Local Area Networks Exposition 1988. Papers presented at
Konferenz
European Fiber Optic Communications and Local Area Networks Exposition (EFOC LAN) 1988
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Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
Tags
  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • integrated optoelectronics

  • monolithic integrated circuits

  • optical communication equipment

  • transmitters

  • monolithic ic

  • semiinsulating substrates

  • oeics

  • optoelectronics

  • electronic components

  • optical transmitters

  • brs-lasers

  • movpe layers

  • light sources

  • heterojunction bipolar transistors

  • differential amplifier ic

  • constant current source

  • InGaAsP-InP

  • InP substrates

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