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1988
Konferenzbeitrag
Titel
Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
Abstract
Presents technologies and devices suited for monolithic integration of InP based optoelectronics and electronic components needed in optical transmitters. The authors report on BRS-lasers on semi-insulating InP substrates and BH-lasers regrown with semi-insulating InP MOVPE layers as light sources. Single heterojunction bipolar transistors and a differential amplifier IC with constant current source are fabricated and characterized.

Language
Englisch
Tags
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gallium arsenide
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iii-v semiconductors
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indium compounds
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integrated optoelectr...
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monolithic integrated...
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optical communication...
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transmitters
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monolithic ic
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semiinsulating substr...
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oeics
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optoelectronics
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electronic components...
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optical transmitters
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brs-lasers
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movpe layers
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light sources
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heterojunction bipola...
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differential amplifie...
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constant current sour...
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InGaAsP-InP
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InP substrates