1988
Conference Paper
Title

Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs

Abstract
Presents technologies and devices suited for monolithic integration of InP based optoelectronics and electronic components needed in optical transmitters. The authors report on BRS-lasers on semi-insulating InP substrates and BH-lasers regrown with semi-insulating InP MOVPE layers as light sources. Single heterojunction bipolar transistors and a differential amplifier IC with constant current source are fabricated and characterized.
Author(s)
Bach, H.G.
Fiedler, F.
Grote, N.
Bouadma, N.B.
Rose, B.
Devoldere, P.
Tegude, F.J.
Speier, P.
Wunstel, K.
Mainwork
Conference
Language
English
Keyword(s)