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2003
Journal Article
Titel

Ferromagnet-semiconductor hybrid structures: Hall devices and tunnel junctions

Abstract
For spintronics, both the properties of small ferromagnetic particles as well as the properties of ferromagnet-semiconductor hybrid structures are of importance. Below we describe how micro-Hall magnetometry provides information about the magnetisation switching of small ferromagnetic particles. In the second part we demonstrate spin dependent transport through thin GaAs membranes. The latter experiments point to the important role of spin-flip scattering in ferromagnet- semiconductor hybrid structures.
Author(s)
Kreuzer, S.
Rahm, M.
Biberger, J.
Pulwey, R.
Raabe, J.
Schuh, D.
Wegscheider, W.
Weiss, D.
Zeitschrift
Physica. E
Thumbnail Image
DOI
10.1016/S1386-9477(02)00589-1
Language
English
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Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM
Tags
  • spintronic

  • ferromagnet-semicondu...

  • micro-Hall magnetomet...

  • Hall device

  • tunnel junction

  • magnetisation switchi...

  • small ferromagnetic p...

  • spin dependent transp...

  • spin polarised transp...

  • Schottky barrier

  • metal semiconductor b...

  • GaAs membrane

  • spin-flip scattering

  • GaAs

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