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2003
Journal Article
Title

Ferromagnet-semiconductor hybrid structures: Hall devices and tunnel junctions

Abstract
For spintronics, both the properties of small ferromagnetic particles as well as the properties of ferromagnet-semiconductor hybrid structures are of importance. Below we describe how micro-Hall magnetometry provides information about the magnetisation switching of small ferromagnetic particles. In the second part we demonstrate spin dependent transport through thin GaAs membranes. The latter experiments point to the important role of spin-flip scattering in ferromagnet- semiconductor hybrid structures.
Author(s)
Kreuzer, S.
Rahm, M.
Biberger, J.
Pulwey, R.
Raabe, J.
Schuh, D.
Wegscheider, W.
Weiss, D.
Journal
Physica. E  
DOI
10.1016/S1386-9477(02)00589-1
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
Keyword(s)
  • spintronic

  • ferromagnet-semiconductor hybrid structure

  • micro-Hall magnetometry

  • Hall device

  • tunnel junction

  • magnetisation switching

  • small ferromagnetic particle

  • spin dependent transport

  • spin polarised transport

  • Schottky barrier

  • metal semiconductor boundary

  • GaAs membrane

  • spin-flip scattering

  • GaAs

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