Temperature driven memristive switching in Al/TiO2/Al devices

Aluminum/titanium dioxide/aluminum memristor structures were investigated via electrical and temperature-dependent measurements. At room temperature, devices show bipolar memristive switching under applied voltage bias with OFF-ON resistance ratios on the order of 10. Increasing the temperature up to 90 -140°C such a memristor, which has been prepared in the high-resistance state (HRS) before, undergoes a pronounced switching into its low resistance state (LRS). This temperature driven switching is reversible, i.e., it can be reset via application of an appropriate bias voltage sweep, typically up to ~1 V. We have further investigated this temperature effect as function of an additionally applied bias and discuss our findings within a proposed atomistic model involving the preferential motion of oxygen vacancies into pre-exposed TiO 2 regions.