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1990
Conference Paper
Title
Ultra flat P-N junctions formed by solid source laser doping
Abstract
A CO2 high-power laser was used for laser-driven boron and phosphorus diffusion from silicate glass layers. Flat profiles were obtained in a depth less than 0.1 mym by a concentration of about 10 high 19 ccm. For analytics mainly were used SIMS, SEM and spreading resistance method.