Heavy carbon doping in metal-organic vapor phase epitaxy -MOVPE- for GaAs using trimethylarsine

GaAs layers heavily doped with carbon were grown by MOVPE using trimethylarsine (TMAs) and trimethylgallium (TMGa). SIMS analysis and Hall effect measurements were performed. The carbon concentration is strongly dependent on deposition temperature, the influence of the other growth parameters is weak. The highest doping level of 3x10 high 20 cm high -3 was obtained at 510 degree C yielding a hole concentration of 1x10 high 20 cm high -3 and a resistivity of 10 high -3 Omega cm. A growth interruption of only 2 seconds at the interface between GaAs:C and nominally undoped GaAs is sufficient for a profile abruptness better than 22 A per decade.