2003
Conference Paper
Title

GaAs-based tunnel junctions

Abstract
The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7×10-5 /cm2 and a peak current density of > 1900 A/cm2. The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.
Author(s)
Möller, C.
Böttcher, J.
Künzel, H.
Mainwork
Conference
DOI
Language
English