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  4. Local stress measurement on metal lines and dielectrics of BEoL pattern by stress relief technique
 
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2011
Conference Paper
Title

Local stress measurement on metal lines and dielectrics of BEoL pattern by stress relief technique

Abstract
The paper presents a new measurement method for residual stresses introduced by manufacturing in BEoL structures. Material removal by FIB ion milling is used to release elastically frozen stresses. Normal stress components are calculated from local stress relaxation nearby milled trenches. A validation of the new technique is accomplished by additional bow measurements on defined layers on substrate. Spatially resolved determination of stress values in metal lines and the dielectrics in between demonstrates the capability of the tool for future applications.
Author(s)
Vogel, D.
Rzepka, S.
Michel, B.
Gollhardt, A.
Mainwork
SCD 2011, IEEE Semiconductor Conference Dresden. Technology, Design, Packaging, Simulation and Test. CD-ROM  
Conference
Semiconductor Conference 2011  
DOI
10.1109/SCD.2011.6068737
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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